The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
May. 23, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jong-Ho Lee, Hwaseong-si, KR;
Min-Keun Kwak, Suwon-si, KR;
Bum-Joon Youn, Suwon-si, KR;
Sung-Won Choi, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A method for making a semiconductor device includes forming a trench in a first layer on a substrate. A conductive layer having a pattern is formed in the trench. A first metal gate electrode is formed on the conductive layer, and a second metal gate electrode is formed on the first metal gate electrode. The first and second metal gate electrodes at least partially conform to the pattern of the conductive layer. Widths of first surfaces of the first and second metal gate electrodes are different from respective widths of second surfaces of the first and second metal gate electrodes as a result of the pattern.