The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Jan. 07, 2014
Abb Technology Ag, Zürich, CH;
Maxi Andenna, Fislisbach, CH;
Munaf Rahimo, Uezwil, CH;
Chiara Corvasce, Bergdietikon, CH;
Arnost Kopta, Zürich, CH;
ABB TECHNOLOGY AG, Zurich, CH;
Abstract
An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region arranged on the base layer towards the emitter side, a trench gate electrode arranged lateral to the base layer and extending deeper into the drift layer than the base layer, a well arranged lateral to the base layer and extending deeper into the drift layer than the base layer, an enhancement layer surrounding the base layer so as to completely separate the base layer from the drift layer and the well, an electrically conducting layer covering the well and separated from the well by a second electrically insulating layer, and a third insulating layer having a recess on top of the electrically conducting layer such that the electrically conducting layer electrically contacts a emitter electrode.