The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
May. 21, 2012
Masaki Saitoh, Osaka, JP;
Masaki Saitoh, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
A resist layer () including a thick film section (), which is relatively thick, at one side thereof, and a thin film section (), which is relatively thin, at the other side thereof is formed using a multiple-tone mask. A gate electrode () is formed at a place where it will be provided on a semiconductor layer () so as to be narrower than the resist layer (), by executing isotropic etching to a conductive film () formed in advance using the resist layer () as a mask, in order to form overhang portions () on the resist layer () at both sides of the gate electrode (). Then, the entire thin film section () is removed, the thick film section () is made thinner, and impurities are implanted into the semiconductor layer () using the remaining resist layer () and the gate electrode () as masks.