The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Mar. 14, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jaejune Jang, Hwaseong-si, KR;
JaeHyun Jung, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 21/823807 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01); H01L 29/045 (2013.01); H01L 29/0653 (2013.01); H01L 29/78 (2013.01); H01L 29/7833 (2013.01); H01L 29/7842 (2013.01); H01L 29/165 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type, a mesh-type gate electrode including first portions extending in a first direction and second portions extending in a second direction crossing the first direction over the substrate. The mesh-type gate structure may have a plurality of openings, and source regions and drain regions of second conductivity type alternately arranged in the first direction and the second direction in the substrate at locations corresponding to the openings.