The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Mar. 28, 2014
Applicant:
Murata Manufacturing Co. Ltd., Nagaokakyo-shi, Kyoto-fu, JP;
Inventor:
Mitsutoshi Kawamoto, Nagaokakyo, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 27/108 (2006.01); H01L 21/20 (2006.01); H01L 49/02 (2006.01); H01G 4/30 (2006.01); H01C 7/10 (2006.01); H01C 7/18 (2006.01); H01C 17/065 (2006.01); C04B 35/47 (2006.01); C04B 35/626 (2006.01); B82Y 30/00 (2011.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); B82Y 30/00 (2013.01); C04B 35/47 (2013.01); C04B 35/62685 (2013.01); H01C 7/1006 (2013.01); H01C 7/18 (2013.01); H01C 17/06533 (2013.01); H01G 4/1227 (2013.01); H01G 4/30 (2013.01); H01L 28/82 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3241 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3262 (2013.01); C04B 2235/3267 (2013.01); C04B 2235/3275 (2013.01); C04B 2235/3279 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/441 (2013.01); C04B 2235/5409 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/6582 (2013.01); C04B 2235/785 (2013.01); C04B 2235/786 (2013.01); C04B 2235/79 (2013.01); C04B 2235/85 (2013.01); H01G 4/12 (2013.01);
Abstract
A semiconductor ceramic having a compounding molar ratio m between a Sr site and a Ti site that satisfies 1.000 ≦m≦1.020, has a donor element present as a solid solution in crystal grains, has an acceptor element present in a grain boundary layer in the range of 0.5 mol or less with respect to 100 mol of the Ti element, contains a Zr element in the range of 0.15 mol or more and 3.0 mol or less with respect to 100 mol of the Ti element, and has the crystal grains of 1.5 μm or less in average grain size.