The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Mar. 10, 2014
Applicants:
Hiroyuki Kanaya, Seoul, KR;
Dong Jun Kim, Suwon-si, KR;
Sung Hoon Lee, Icheon-si, KR;
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01); G11C 7/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 7/18 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/12 (2013.01);
Abstract
According to one embodiment, a magnetic memory includes a cell transistor including a first source/drain diffusion layer and a second source/drain diffusion layer, a first contact on the first source/drain diffusion layer, a memory element on the first contact, and a second contact on the second source/drain diffusion layer, the second contact including a first plug on the second source/drain diffusion layer, and a second plug on the first plug.