The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2015

Filed:

Dec. 12, 2013
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza (MB), IT;

Inventors:

Paolo Iuliano, Villa D'adda, IT;

Francesca Milanesi, Milan, IT;

Vincenzo Palumbo, Vimercate, IT;

Sonia Pirotta, Ronco Briantino, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza (MB), IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/14 (2006.01); G01R 33/00 (2006.01); H01L 43/04 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/22 (2013.01); G01R 33/0052 (2013.01); H01L 43/04 (2013.01); H01L 43/14 (2013.01); H01L 27/0688 (2013.01);
Abstract

A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.


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