The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Jun. 04, 2012
Applicant:
Chun Soo Kang, Yongin-si, KR;
Inventor:
Chun Soo Kang, Yongin-si, KR;
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/108 (2006.01); H01L 29/423 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10894 (2013.01); H01L 27/10891 (2013.01); H01L 29/4238 (2013.01); H01L 27/0207 (2013.01); H01L 27/10876 (2013.01);
Abstract
Provided is a transistor of a semiconductor device and a method for fabricating the same. A transistor of a semiconductor device may include: a semiconductor substrate having an active region defined by an isolation layer; a recess trench formed in the active region and disposed to cross the semiconductor substrate in one direction; and a gate line formed in a straight line pattern, overlapping the recess trench and disposed to cross the recess trench at approximately right angles.
Kang, Chun. (2015). Transistor of semiconductor device and method for fabricating the same (U.S. Patent No. 9105508). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9105508
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile