The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Mar. 24, 2015
Francis J. Kub, Arnold, MD (US);
Travis J. Anderson, Alexandria, VA (US);
Michael A. Mastro, Fairfax, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Jennifer K. Hite, Arlington, VA (US);
Francis J. Kub, Arnold, MD (US);
Travis J. Anderson, Alexandria, VA (US);
Michael A. Mastro, Fairfax, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Jennifer K. Hite, Arlington, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.