The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Jan. 08, 2014
Mitsubishi Electric Corporation, Tokyo, JP;
Atsushi Narazaki, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a first conductive type semiconductor substrate, a second conductive type active region formed on a top surface side of the semiconductor substrate, a second conductive type inside VLD region formed to contact the active region on the top surface side in a plan view, and a second conductive type well region formed to contact a portion opposite to the portion contacting the active region of the inside VLD region on the top surface side in a plan view. The well region is formed to be deeper than the active region. The inside VLD region has the same depth as that of the active region in the portion contacting the active region, the depth gradually increasing from the active region toward the well region and becoming the same as the depth of the well region in the portion contacting the well region.