The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2015

Filed:

Jul. 24, 2012
Applicants:

Sarunya Bangsaruntip, Yorktown Heights, NY (US);

Stephen J. Koester, Yorktown Heights, NY (US);

Amlan Majumdar, Yorktown Heights, NY (US);

Jeffrey W. Sleights, Yorktown Heights, NY (US);

Inventors:

Sarunya Bangsaruntip, Yorktown Heights, NY (US);

Stephen J. Koester, Yorktown Heights, NY (US);

Amlan Majumdar, Yorktown Heights, NY (US);

Jeffrey W. Sleights, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/04 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 21/047 (2013.01); B82Y 10/00 (2013.01); H01L 29/0665 (2013.01); H01L 29/0669 (2013.01); H01L 29/42312 (2013.01); H01L 29/66356 (2013.01); H01L 29/7391 (2013.01);
Abstract

A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second portion of the nanowire adjacent to the channel portion.


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