The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Aug. 31, 2012
Applicants:
Tae Won Noh, Seoul, KR;
Daesu Lee, Seoul, KR;
Jong-gul Yoon, Suwon-si, KR;
Inventors:
Assignee:
Seoul National University R&DB Foundation, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 27/115 (2006.01); H01L 49/02 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/221 (2013.01); G11C 11/2275 (2013.01); H01L 27/11502 (2013.01); H01L 27/11507 (2013.01); H01L 27/11509 (2013.01); H01L 28/55 (2013.01); G11C 11/22 (2013.01); H01L 27/228 (2013.01);
Abstract
The present invention relates to a ferroelectric memory device having a multilevel polarization (MLP) state generated due to adjustment of a displacement current and to a method for manufacturing the ferroelectric memory device.