The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Dec. 07, 2012
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Yasuhiro Shiino, Fujisawa, JP;
Shigefumi Irieda, Yokohama, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
A non-volatile semiconductor memory device according to one embodiment includes: a cell array; and a data writing unit that repeatedly executes a write loop including a programming operation of applying a program voltage to a selected word line and a passage voltage to non-selected word lines during writing of data, in which, when a difference between the passage voltage used in an n-th write loop and the passage voltage used in an n+1-th write loop is expressed as ΔVn and when a condition of L<M (L and M are integers) is satisfied, the data writing unit executes the write loop using the passage voltage where ΔV(L−1)<ΔVL, ΔVL≦ΔV(M−1), and ΔV(M−1)<ΔVM.