The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2015

Filed:

Nov. 30, 2011
Applicants:

Jeremy Isaac Nathaniel Werner, San Jose, CA (US);

Leonid Baryudin, San Jose, CA (US);

Timothy Lawrence Canepa, Los Gatos, CA (US);

Earl T Cohen, Oakland, CA (US);

Inventors:

Jeremy Isaac Nathaniel Werner, San Jose, CA (US);

Leonid Baryudin, San Jose, CA (US);

Timothy Lawrence Canepa, Los Gatos, CA (US);

Earl T Cohen, Oakland, CA (US);

Assignee:

Seagate Technology LLC, Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G11B 20/18 (2006.01); H03M 13/35 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G11B 20/1883 (2013.01); G06F 11/108 (2013.01); H03M 13/353 (2013.01); G06F 11/1044 (2013.01);
Abstract

A Solid-State Disk (SSD) controller enables dynamic higher-level redundancy mode management with independent silicon elements to provide graceful degradation as non-volatile (e.g. flash) memory elements fail during operation of an SSD implemented by the controller. Higher-level error correction provides correction of lower-level uncorrectable errors. If a failure of one of the non-volatile memory elements is detected, then the higher-level error correction is dynamically transitioned from operating in a current mode to operating in a new mode. The transition includes one or more of reducing free space available on the SSD, rearranging data storage of the SSD, recovering/storing failed user data (if possible), and determining/storing revised higher-level error correction information. Operation then continues in the new mode. If another failure of the non-volatile memory elements is detected, then another transition is made to another new mode.


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