The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2015

Filed:

Mar. 31, 2009
Applicants:

Thorsten Trupke, Coogee, AU;

Robert A. Bardos, North Bondi, AU;

Inventors:

Thorsten Trupke, Coogee, AU;

Robert A. Bardos, North Bondi, AU;

Assignee:

BT IMAGING PTY LTD., New South Wales, AU;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 1/04 (2006.01); H04N 7/18 (2006.01); H04N 9/47 (2006.01); G01N 21/64 (2006.01); G01N 21/95 (2006.01); G06T 7/00 (2006.01); H01L 21/66 (2006.01); H01L 31/18 (2006.01); H02S 50/10 (2014.01);
U.S. Cl.
CPC ...
G01N 21/6489 (2013.01); G01N 21/9505 (2013.01); G06T 7/0004 (2013.01); H01L 22/12 (2013.01); H01L 31/18 (2013.01); G01N 2021/646 (2013.01); G06T 2207/30148 (2013.01); H01L 2924/0002 (2013.01); H02S 50/10 (2014.12);
Abstract

A method is disclosed whereby luminescence images are captured from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed to provide information is then utilized to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilized to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials.


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