The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9103000 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 11, 2015

Filed:

Nov. 23, 2010
Applicants:

Mariana Munteanu, Santa Clara, CA (US);

Brian Josef Bartholomeusz, Palo Alto, CA (US);

Michael Bartholomeusz, Phoenix, AZ (US);

Erol Girt, Burnaby, CA;

Inventors:

Mariana Munteanu, Santa Clara, CA (US);

Brian Josef Bartholomeusz, Palo Alto, CA (US);

Michael Bartholomeusz, Phoenix, AZ (US);

Erol Girt, Burnaby, CA;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C 9/00 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); C22C 1/04 (2006.01); C04B 35/547 (2006.01); C04B 35/645 (2006.01); C04B 35/653 (2006.01);
U.S. Cl.
CPC ...
C22C 1/0491 (2013.01); C04B 35/547 (2013.01); C04B 35/6455 (2013.01); C04B 35/653 (2013.01); C23C 14/0623 (2013.01); C23C 14/3414 (2013.01); B22F 2998/10 (2013.01); C04B 2235/3201 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3239 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3262 (2013.01); C04B 2235/3281 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3289 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/3296 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/42 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/72 (2013.01); C04B 2235/721 (2013.01); C04B 2235/722 (2013.01); C04B 2235/723 (2013.01); C04B 2235/77 (2013.01);
Abstract

In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu(SeSTe), wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.


Find Patent Forward Citations

Munteanu, Mariana. (2015). Low melting point sputter targets for chalcogenide photovoltaic applications and methods of manufacturing the same (U.S. Patent No. 9103000). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9103000

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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