The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Oct. 17, 2008
Applicants:

Tsuguki Noma, Kyoto, JP;

Miroru Murayama, Kyoto, JP;

Satoshi Uchida, Kyoto, JP;

Tsutomu Ishikawa, Kyoto, JP;

Inventors:

Tsuguki Noma, Kyoto, JP;

Miroru Murayama, Kyoto, JP;

Satoshi Uchida, Kyoto, JP;

Tsutomu Ishikawa, Kyoto, JP;

Assignee:

ROHM CO., LTD, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/223 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2231 (2013.01); H01S 5/2219 (2013.01); H01S 5/2227 (2013.01);
Abstract

Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (); an n-type clad layer () arranged on the substrate (); an active layer () arranged on the n-type clad layer (); a p-type clad layer (), which is arranged on the active layer () and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (), which is arranged on the surface of the p-clad layer () excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (); and a light absorption layer (), which is arranged on the current block layer () and absorbs light at the laser oscillation wavelength.


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