The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
May. 02, 2014
Chia-hao Marcus Chuang, Cambridge, MA (US);
Vladimir Bulovic, Lexington, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Patrick Richard Brown, Cambridge, MA (US);
Chia-Hao Marcus Chuang, Cambridge, MA (US);
Vladimir Bulovic, Lexington, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Patrick Richard Brown, Cambridge, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A solar cell and method of making are disclosed. The solar cell includes an acceptor layer a donor layer treated with a first quantum dot (QD) ligand and a blocking layer treated with a second, different, QD ligand. The acceptor layer has an acceptor layer valence band and an acceptor layer conduction band. The donor layer has a donor layer valence band and a donor layer conduction band, the donor layer valence band is higher than the acceptor layer valence band, the donor layer conduction band is higher than the acceptor layer conduction band. The blocking layer least partially blocks electron flow in at least one direction, the blocking layer having a blocking layer valence band and a blocking layer conduction band, the blocking layer valence band is higher than the donor layer valence band, the blocking layer conduction band is higher than the donor layer conduction band.