The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Sep. 06, 2012
Bahman Hekmatshoar-tabari, Mount Kisco, NY (US);
Marinus Hopstaken, Carmel, NY (US);
Dae-gyu Park, Poughquaq, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam G. Shahidi, Round Ridge, NY (US);
Davood Shahrjerdi, Ossining, NY (US);
Bahman Hekmatshoar-Tabari, Mount Kisco, NY (US);
Marinus Hopstaken, Carmel, NY (US);
Dae-Gyu Park, Poughquaq, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam G. Shahidi, Round Ridge, NY (US);
Davood Shahrjerdi, Ossining, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material, and annealing the hydrogenated amorphous silicon containing material in a deuterium containing atmosphere. Deuterium from the deuterium-containing atmosphere is introduced to the lattice of the hydrogenated amorphous silicon containing material through the surface of the hydrogenated amorphous silicon containing material. In some embodiments, the deuterium that is introduced to the lattice of the hydrogenated amorphous silicon containing material increases the stability of the hydrogenated amorphous silicon containing material.