The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Sep. 12, 2014
Yeon Woo Seo, Hwaseong-Si, KR;
Jung-sub Kim, Hwaseong-Si, KR;
Young Jin Choi, Seoul, KR;
Denis Sannikov, Suwon-Si, KR;
Han Kyu Seong, Seoul, KR;
Dae Myung Chun, Hwaseong-Si, KR;
Jae Hyeok Heo, Suwon-Si, KR;
Yeon Woo Seo, Hwaseong-Si, KR;
Jung-Sub Kim, Hwaseong-Si, KR;
Young Jin Choi, Seoul, KR;
Denis Sannikov, Suwon-Si, KR;
Han Kyu Seong, Seoul, KR;
Dae Myung Chun, Hwaseong-Si, KR;
Jae Hyeok Heo, Suwon-Si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.