The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Jun. 06, 2012
Hyun-suk Kim, Hwaseong-si, KR;
Sang-yoon Lee, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Jong-baek Seon, Yongin-si, KR;
Kyoung-seok Son, Seoul, KR;
Won-mook Choi, Hwaseong-si, KR;
Joon-seok Park, Seongnam-si, KR;
Mi-jeong Song, Suwon-si, KR;
Hyun-suk Kim, Hwaseong-si, KR;
Sang-yoon Lee, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Jong-baek Seon, Yongin-si, KR;
Kyoung-seok Son, Seoul, KR;
Won-mook Choi, Hwaseong-si, KR;
Joon-seok Park, Seongnam-si, KR;
Mi-jeong Song, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Samsung Display Co., Ltd., Gyeonggi-do, KR;
Abstract
A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.