The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Aug. 13, 2013
Renesas Electronics Corporation, Kanagawa, JP;
Ming Zhang, Kanagawa, JP;
Yasuki Yoshihisa, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Abstract
To provide a semiconductor device and a manufacturing method thereof achieving both reduction in ON resistance and increase in breakdown voltage and suppressing a short circuit. The semiconductor device has, in its semiconductor substrate having a main surface, a ptype epitaxial region, ntype epitaxial region, n type offset region, and p type body region configuring a pn junction therewith; and further has a ptype buried region between the ptype and ntype epitaxial regions, isolation trench extending from the main surface to the ptype buried region, and trench sidewall n type region formed on at least a portion of the sidewall of the isolation trench. The n type impurity concentration in the trench sidewall n type region is higher than that in the ntype epitaxial region. The trench sidewall n type region extends along the sidewall to reach the ptype buried region.