The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Oct. 04, 2012
Applicants:
Universidad DE Granada, Granada, ES;
Centre National DE LA Recherche Scientifique, Paris Cedex, FR;
Inventors:
Assignees:
UNIVERSIDAD DE GRANADA, Granada, ES;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris Cedex, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/775 (2006.01); H01L 29/78 (2006.01); G11C 11/404 (2006.01); H01L 21/84 (2006.01); H01L 27/108 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); G11C 11/404 (2013.01); H01L 21/845 (2013.01); H01L 27/10802 (2013.01); H01L 27/10805 (2013.01); H01L 27/10844 (2013.01); H01L 27/1211 (2013.01); H01L 29/0657 (2013.01); H01L 29/78 (2013.01); H01L 29/7841 (2013.01);
Abstract
A memory cell formed of a semiconductor nanorod having its ends heavily doped to form source and drain regions and having its central portion including, between the source and drain regions, an N-type region surrounded on a majority of its periphery with a quasi-intrinsic P-type region, and wherein the P-type region itself is surrounded with an insulated gate.