The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Aug. 28, 2009
Applicants:

Katherina E. Babich, Chappaqua, NY (US);

Alessandro C. Callegari, Yorktown Heights, NY (US);

John J. Connolly, Ossining, NY (US);

Eugene J. O'sullivan, Nyack, NY (US);

Inventors:

Katherina E. Babich, Chappaqua, NY (US);

Alessandro C. Callegari, Yorktown Heights, NY (US);

John J. Connolly, Ossining, NY (US);

Eugene J. O'Sullivan, Nyack, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/14 (2006.01); H01L 21/768 (2006.01); H01J 37/305 (2006.01); H01J 37/304 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01J 37/305 (2013.01); H01J 37/3045 (2013.01); H01J 37/3056 (2013.01); H01L 23/53276 (2013.01); H01L 2221/1094 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer on a substrate, the insulating layer having a top surface; forming a via in the insulating layer; forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via.


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