The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Jun. 30, 2014
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Kazuto Watanabe, Kumamoto, JP;
Atsushi Matsushita, Kumamoto, JP;
Hiroshi Horikoshi, Kumamoto, JP;
Iwao Sugiura, Kumamoto, JP;
Yuuji Nishimura, Kumamoto, JP;
Syota Yamabata, Kumamoto, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76841 (2013.01); H01L 27/14683 (2013.01); H01L 27/14687 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14685 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/01021 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/3025 (2013.01);
Abstract
A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.