The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Feb. 22, 2013
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventors:
Jongsun Sel, Los Gatos, CA (US);
Tuan Pham, San Jose, CA (US);
Assignee:
SanDisk Technologies Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 27/115 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/28273 (2013.01); H01L 21/32139 (2013.01); H01L 27/11524 (2013.01); H01L 27/11519 (2013.01); H01L 27/11529 (2013.01);
Abstract
Narrow word lines are formed in a NAND flash memory array using a double patterning process in which sidewall spacers define word lines. Sidewall spacers also define edges of select gates so that spacing between a select gate and the closest word line is equal to spacing between adjacent word lines.