The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Dec. 13, 2012
Applicant:

Stmicroelectronics S.r.i., Agrate Brianza, IT;

Inventor:

Giuseppe Scilla, Catania, IT;

Assignee:

STMicroelectronics S.r.l, Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/06 (2006.01); H01L 29/73 (2006.01); H01L 27/102 (2006.01); H03K 17/0812 (2006.01); H03K 17/082 (2006.01); H03K 17/12 (2006.01); H03K 17/14 (2006.01); H01L 27/02 (2006.01); G01R 19/00 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/73 (2013.01); H01L 27/0207 (2013.01); H01L 27/1022 (2013.01); H01L 29/7302 (2013.01); H03K 17/0826 (2013.01); H03K 17/08126 (2013.01); H03K 17/12 (2013.01); H03K 17/14 (2013.01); G01R 19/0092 (2013.01); H01L 29/0692 (2013.01); H03K 2217/0027 (2013.01);
Abstract

A power bipolar structure is described having at least one first, one second and one third terminal and including at least one power bipolar transistor having a finger structure coupled to at least one driving block. The power bipolar transistor includes at least one elemental bipolar cell connected to these first, second and third terminals and including at least one power elemental bipolar structure corresponding to a finger of the power bipolar transistor, electrically coupled between the first and second terminals and coupled to a driving section of the driving block by at least one sensing section able to detect information on the operation of the power elemental bipolar structure, the sensing section being in turn coupled to a control circuit and supplying it with a current value as a function of the local temperature of the power elemental bipolar structure.


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