The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Jun. 18, 2013
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Matthias Merz, Leuven, BE;

Casper Juffermans, Valkenswaard, NL;

Axel Nackaerts, Heverlee, BE;

Assignee:

NXP, B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/403 (2006.01); H01L 21/00 (2006.01); H01L 29/66 (2006.01); G01N 27/414 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66 (2013.01); G01N 27/4145 (2013.01); G01N 27/4148 (2013.01); H01L 29/66007 (2013.01);
Abstract

Disclosed is an integrated circuit comprising a substrate () carrying plurality of circuit elements (); a metallization stack () over said substrate for providing interconnections to at least some of said circuit elements, the metallization stack comprising a plurality of patterned metal layers () spatially separated from each other by respective electrically insulating layers (), at least some of said electrically insulating layers comprising conductive portions () that electrically interconnect portions of adjacent metal layers, wherein at least one of the patterned metallization layers comprises a plurality of ion-sensitive electrodes (), each ion-sensitive electrode being electrically connected to at least one of said circuit elements, a plurality of sample volumes () extending into said metallization stack, each sample volume terminating at one of said ion-sensitive electrodes; and an ion-sensitive layer lining at least the ion-sensitive electrodes in said sample volumes. A method of manufacturing such an IC is also disclosed.


Find Patent Forward Citations

Loading…