The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Jun. 13, 2014
Ps4 Luxco S.a.r.l., Luxembourg, LU;
Hiroyuki Fujimoto, Tokyo, JP;
PS4 Luxco S.a.r.l., Luxembourg, LU;
Abstract
A method for producing a semiconductor device includes: a process for forming a first conductor on a first interlayer insulating film provided on a semiconductor substrate, a process for forming in order a first stopper interlayer film, a second interlayer insulating film, a second stopper interlayer film, and a third interlayer insulating film on the first interlayer insulating film to cover the first conductor, a process for penetrating the third interlayer insulating film, the second stopper interlayer film, and the second interlayer insulating film, and forming a first contact hole having a first inner diameter on a position corresponding to the first conductor, a process for expanding the inner diameter of the first contact hole on the second interlayer insulating film to a second inner diameter larger than the first inner diameter, and a process for forming on the first stopper interlayer film a second contact hole.