The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Jul. 02, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Keiichi Matsushita, Ota-ku, JP;

Yo Sasaki, Saitama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 23/10 (2006.01); H01L 23/482 (2006.01); H01L 21/50 (2006.01); H01L 23/14 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3736 (2013.01); H01L 21/50 (2013.01); H01L 23/10 (2013.01); H01L 23/142 (2013.01); H01L 23/4827 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/49 (2013.01); H01L 24/83 (2013.01); H01L 24/03 (2013.01); H01L 24/27 (2013.01); H01L 24/48 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/2741 (2013.01); H01L 2224/2743 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29084 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29164 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/29169 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32501 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83359 (2013.01); H01L 2224/83379 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/83825 (2013.01); H01L 2224/85444 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/161 (2013.01); H01L 2924/171 (2013.01); H01L 2924/2064 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a semiconductor element, a mounting member including Cu, and a bonding layer provided between the semiconductor element and the mounting member. The bonding layer includes a first region including Ti and Cu, and a second region provided between the first region and the mounting member, and including Sn and Cu. A first position along the first direction is positioned between the semiconductor element and a second position along the first direction. The first position is where the composition ratio of Ti in the first region is 0.1 times a maximum value of the composition ratio of Ti. The second position is where the composition ratio of Sn in the second region is 0.1 times a maximum value of the composition ratio of Sn. A distance between the first position and the second position is not less than 0.1 micrometers.


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