The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Mar. 08, 2013
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Youichi Kamada, Yamato, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/15 (2006.01); H01L 21/336 (2006.01); H01L 29/36 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02581 (2013.01); H01L 29/10 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 23/49562 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/73265 (2013.01);
Abstract
A compound semiconductor device includes: a substrate; an electron transit layer and electron supply layer formed over the substrate; a gate electrode, source electrode, and drain electrode formed over the electron supply layer; and a first Fe-doped layer provided between the substrate and the electron transit layer in a region corresponding to the position of the gate electrode in plan view, the first Fe-doped layer being doped with Fe to reduce two dimensional electron gas generated below the gate electrode.