The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Aug. 24, 2011
Shu HU, Pasadena, CA (US);
Paul C. Mcintyre, Sunnyvale, CA (US);
Shu Hu, Pasadena, CA (US);
Paul C. McIntyre, Sunnyvale, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
A device and a method of forming a continuous polycrystalline Ge film having crystalline Ge islands is provided that includes depositing an amorphous Ge (a-Ge) layer on a substrate, oxidizing the top surface of the a-Ge layer to form a GeOlayer, depositing a seed layer of Al on the GeOlayer and catalyzing the Al seed layer, where Ge mass transport is generated from the underlying a-Ge layer to the Al seed layer through the GeOlayer by thermal annealing, where a continuous polycrystalline Ge film having crystalline Ge islands is formed on the Al seed layer.