The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Dec. 06, 2013
Applicants:

Nam-gun Kim, Suwon-si, KR;

Kyungho Jang, Hwaseong-si, KR;

Inventors:

Nam-Gun Kim, Suwon-si, KR;

Kyungho Jang, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 27/108 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0337 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 27/2472 (2013.01); H01L 45/06 (2013.01); H01L 45/10 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 27/10852 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

Methods for forming a semiconductor device including fine patterns are provided. The method may include forming a mask layer including first holes spaced apart from each other in a first direction and a second direction. The method may also include forming local mask patterns on the mask layer and forming a sacrificial layer on the mask layer filling the first holes and surrounding the local mask patterns. The local mask patterns may be offset from the first holes in the first direction and the second direction. The method may further include removing the local mask patterns to form openings in the sacrificial layer exposing the mask layer and etching the mask layer through the opening to form second holes in the mask layer.


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