The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Aug. 05, 2013
International Business Machines Corporation, Armonk, NY (US);
Globalfoundaries Inc., Cayman Islands, KY;
Takashi Ando, Tuckahoe, NY (US);
Eduard A. Cartier, New York, NY (US);
Kisik Choi, Watervliet, NY (US);
Wing L. Lai, Williston, VT (US);
Vijay Narayanan, New York, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
GLOBALFOUNDRIES Inc., Cayman Islands, KY;
Abstract
A method for semiconductor fabrication includes forming at least one of a diffusion barrier layer and a metal containing layer over a dielectric layer in a gate cavity. A first anneal is performed to diffuse elements from the at least one of the diffusion barrier layer and the metal containing layer into the dielectric layer. The metal containing layer and the diffusion barrier layer are removed. A second anneal is performed to adjust diffusion of the elements in the dielectric layer to provide a gate dielectric region.