The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Apr. 20, 2012
Applicants:

Sung-ho Kim, Yongin, KR;

Do-young Kim, Yongin, KR;

Min-chul Shin, Yongin, KR;

Min-hwan Choi, Yongin, KR;

Jong-moo Huh, Yongin, KR;

Inventors:

Sung-Ho Kim, Yongin, KR;

Do-Young Kim, Yongin, KR;

Min-Chul Shin, Yongin, KR;

Min-Hwan Choi, Yongin, KR;

Jong-Moo Huh, Yongin, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/20 (2006.01); H01L 21/268 (2006.01); H01L 21/67 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/268 (2013.01); H01L 21/67115 (2013.01); H01L 27/1229 (2013.01); H01L 27/1285 (2013.01); H01L 27/3262 (2013.01);
Abstract

A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times.


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