The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Jul. 28, 2013
Furukawa Electric Co., Ltd., Chiyoda-ku, Tokyo, JP;
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Masayuki Iwami, Yokohama, JP;
Takuya Kokawa, Yokohama, JP;
FURUKAWA ELECTRIC CO., LTD., Tokyo, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A GaN-based semiconductor is epitaxially grown on a silicon substrate with a surface orientation of (111). The difference between the lattice constant of the GaN and the silicon (111) surface is approximately 17%, which is quite large. Therefore, the dislocation density of the grown GaN exceeds 10cm. Screw dislocation density causes the leak current of the transistor using GaN to increases. Furthermore, the mobility of the transistor is reduced. Provided is a semiconductor substrate comprising a silicon substrate and a nitride semiconductor layer that is epitaxially grown on a (150) surface of the silicon substrate.