The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Dec. 10, 2012
Hyundai Motor Company, Seoul, KR;
Jong Seok Lee, Suwon-si, KR;
Kyoung-Kook Hong, Hwaseong-si, KR;
HYUNDAI MOTOR COMPANY, Seoul, KR;
Abstract
A schottky barrier diode may include a first n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate, a first p+ region disposed in the first n− type epitaxial layer, a second n type epitaxial layer disposed on the first n− type epitaxial layer and the first p+ region, a second p+ region disposed in the second n type epitaxial layer, a schottky electrode disposed on the second n type epitaxial layer and the second p+ region, and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the first p+ region and the second p+ region may be in contact with each other.