The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Sep. 17, 2010
Applicants:

Gunhee Han, Gyeonggi-do, KR;

Eunsoo Chang, Seoul, KR;

Dongmyung Lee, Seoul, KR;

Ji Min Cheon, Gyeonggi-do, KR;

Inventors:

Gunhee Han, Gyeonggi-do, KR;

Eunsoo Chang, Seoul, KR;

Dongmyung Lee, Seoul, KR;

Ji Min Cheon, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/355 (2011.01); H04N 5/369 (2011.01); H04N 5/374 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14645 (2013.01); H04N 5/35527 (2013.01); H04N 5/3698 (2013.01); H04N 5/374 (2013.01);
Abstract

The inventive concept relates to a CMOS image sensor and an operating method of the CMOS image sensor. The operating method according to an embodiment of the inventive concept includes generating photoelectrons at a photo sensor element during a first time; generating photoelectrons at the photo sensor element during a second time shorter than the first time; and sensing the photoelectrons generated at the photo sensor element. A gate voltage of a transfer transistor connected to the photo sensor element is set differently at the first time and the second time. With an embodiment of the inventive concept, a dynamic range of the CMOS image sensor increases.


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