The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Jun. 21, 2012
Applicants:

Francois Roy, Seyssins, FR;

Julien Michelot, Grenoble, FR;

Inventors:

Francois Roy, Seyssins, FR;

Julien Michelot, Grenoble, FR;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/1461 (2013.01); H01L 27/1464 (2013.01); H01L 27/14638 (2013.01); H01L 27/1463 (2013.01); H01L 27/14607 (2013.01); H01L 31/0352 (2013.01);
Abstract

A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well.


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