The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Aug. 12, 2013
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Naohiko Kimizuka, Kanagawa, JP;

Takuji Matsumoto, Kumamoto, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/146 (2013.01); H01L 27/14609 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14685 (2013.01);
Abstract

A solid-state imaging device comprising a semiconductor substrate; a logic circuit region having a first gate electrode; a pixel region having a plurality of pixel units, each which includes at least one second gate electrode; a first gate insulating film forming between the first gate electrode in the logic circuit region and the semiconductor substrate; a second gate insulating film forming between the second gate electrode in the pixel region and the semiconductor substrate; a first insulating layer covering the first gate electrode and the second gate electrode; and an offset spacer on a sidewall of the first gate electrode being formed by etch back of the first insulating layer on the first gate electrode.


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