The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Jan. 23, 2014
Murata Manufacturing Co., Ltd., Kyoto, JP;
Hiromasa Saeki, Kyoto, JP;
Murata Manufacturing Co., Ltd., Kyoto-fu, JP;
Abstract
The following layers are deposited above the upper surface of a base substrate in this order with a lattice relaxation layer therebetween: a lower barrier layer made of AlGaN (0<x≦0.20), a channel layer made of GaN, and an upper barrier layer made of AlGaN (0.15≦y≦0.30, where x<y). A drain electrode, a source electrode, and an insulating layer are placed on the upper surface of the upper barrier layer. Furthermore, a gate electrode is placed in a position spaced with the insulating layer. A recessed structure is placed directly under the gate electrode. The channel layer includes an n-type doped second channel sub-layer and undoped first channel sub-layer deposited on the lower barrier layer in that order. The bottom of the recessed structure is within the heightwise range of the first channel sub-layer.