The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Mar. 15, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Tae-Won Ha, Seongnam-si, KR;
Suk-Hoon Kim, Yongin-si, KR;
Ju-Youn Kim, Suwon-si, KR;
Kwang-You Seo, Suwon-si, KR;
Jong-Mil Youn, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/823807 (2013.01); H01L 21/823842 (2013.01); H01L 29/1054 (2013.01); H01L 29/4958 (2013.01); H01L 29/517 (2013.01); H01L 29/78 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.