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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9099329 B1

PDFFull Text
Expired
Date of Patent:
Aug. 04, 2015

Filed:

Mar. 01, 2013

In nanowire, device using the same and method of manufacturing in nanowire

Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon, Gyunggi-do, KR;

Inventors:

Hee Suk Chung, Gyunggi-do, KR;

Gyu Seok Kim, Gyunggi-do, KR;

Han Wool Kang, Gyunggi-do, KR;

Kyung Ho Lee, Gyunggi-do, KR;

Mi Yang Kim, Gyunggi-do, KR;

Suk Jin Ham, Gyunggi-do, KR;

Assignee:

SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Marcos D Pizarro

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/033 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 21/02 (2006.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 29/66469 (2013.01); H01L 29/775 (2013.01); H01L 21/0254 (2013.01); H01L 21/02603 (2013.01); H01L 21/02614 (2013.01); H01L 33/18 (2013.01);
Abstract

There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through the at least one through hole.

Find Patent Forward Citations

Chung, Hee. (2015). In nanowire, device using the same and method of manufacturing in nanowire (U.S. Patent No. 9099329). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9099329

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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