The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Mar. 01, 2013
Applicant:
Samsung Electro-mechanics Co., Ltd., Suwon, Gyunggi-do, KR;
Inventors:
Hee Suk Chung, Gyunggi-do, KR;
Gyu Seok Kim, Gyunggi-do, KR;
Han Wool Kang, Gyunggi-do, KR;
Kyung Ho Lee, Gyunggi-do, KR;
Mi Yang Kim, Gyunggi-do, KR;
Suk Jin Ham, Gyunggi-do, KR;
Assignee:
SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/033 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 21/02 (2006.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 29/66469 (2013.01); H01L 29/775 (2013.01); H01L 21/0254 (2013.01); H01L 21/02603 (2013.01); H01L 21/02614 (2013.01); H01L 33/18 (2013.01);
Abstract
There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through the at least one through hole.