The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Aug. 07, 2012
Wilfried Haensch, Somers, NY (US);
Christian Lavoie, Ossining, NY (US);
Christine Qiqing Ouyang, Yorktown Heights, NY (US);
Xiaoyan Shao, Yorktown Heights, NY (US);
Paul M. Solomon, Yorktown Heights, NY (US);
Zhen Zhang, Ossining, NY (US);
Bin Yang, Ossining, NY (US);
Wilfried Haensch, Somers, NY (US);
Christian Lavoie, Ossining, NY (US);
Christine Qiqing Ouyang, Yorktown Heights, NY (US);
Xiaoyan Shao, Yorktown Heights, NY (US);
Paul M. Solomon, Yorktown Heights, NY (US);
Zhen Zhang, Ossining, NY (US);
Bin Yang, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A multigate structure which comprises a semiconductor substrate; an ultra-thin silicon or carbon bodies of less than 20 nanometers thick located on the substrate; an electrolessly deposited metallic layer selectively located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and selectively located on top of the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, and wherein the ultra-thin silicon or carbon bodies and metallic layer located thereon form source and drain regions is provided along with a process to fabricate the structure.