The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Dec. 26, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jang-Woo Ryu, Seoul, KR;

Young-Dae Lee, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/406 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40626 (2013.01); G11C 11/4074 (2013.01);
Abstract

A method of operating a semiconductor memory device is disclosed. The method may include receiving an access command, applying a first voltage to a selected word line of the semiconductor memory device for a period of time in response to receiving the access command, applying a second voltage to word lines adjacent to the selected word line before and after the period of time, and applying a third voltage to the word lines adjacent to the selected word line for the period of time, a voltage level of the third voltage greater than the second voltage. The applying the third voltage may occur when the semiconductor memory device is operated at a temperature below the predetermined temperature.


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