The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Oct. 14, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Hyun-Seuk Yoo, Hwaseong-Si, KR;

Jun-Jin Kong, Yongin-Si, KR;

Chang-Kyu Seol, Osan-Si, KR;

Hong-Rak Son, Anyang-Si, KR;

Young-Geon Yoo, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 11/10 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/16 (2006.01); G11C 29/00 (2006.01); G11C 16/12 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G06F 12/00 (2013.01); G06F 11/10 (2013.01); G06F 11/1048 (2013.01); G11C 11/5628 (2013.01); G11C 16/10 (2013.01); G11C 16/12 (2013.01); G11C 16/16 (2013.01); G11C 16/3427 (2013.01); G11C 16/3454 (2013.01); G11C 29/00 (2013.01); G11C 2211/5648 (2013.01);
Abstract

Provided is a method of operating a memory system. The method includes programming first bit data into multiple memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating multiple third bit data by performing a first process on the second bit data; and selecting third bit data of the calculated multiple third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the multiple third bit data, respectively. The selected third bit data is programmed into the memory cells.


Find Patent Forward Citations

Yoo, Hyun-Seuk. (2015). Memory system and method of operating memory system using reconstructed data (U.S. Patent No. 9098391). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9098391

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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