The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Mar. 08, 2013
Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;
Yasushi Takahashi, Sakai, JP;
Yoshitaka Inui, Kyoto, JP;
Takashi Asano, Kyoto, JP;
Susumu Noda, Kyoto, JP;
Masahiro Chihara, Sakai, JP;
Japan Science and Technology Agency, Kawaguchi-shi, JP;
Abstract
A Raman scattered light enhancement device including a waveguide provided in a photonic crystal () made of a semiconductor substrate in which holes () are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.