The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Jun. 04, 2012
Itaru Gunjishima, Nagakute, JP;
Keisuke Shigetoh, Nagoya, JP;
Yasushi Urakami, Obu, JP;
Masanori Yamada, Nagoya, JP;
Ayumu Adachi, Toyota, JP;
Masakazu Kobayashi, Chichibu, JP;
Itaru Gunjishima, Nagakute, JP;
Keisuke Shigetoh, Nagoya, JP;
Yasushi Urakami, Obu, JP;
Masanori Yamada, Nagoya, JP;
Ayumu Adachi, Toyota, JP;
Masakazu Kobayashi, Chichibu, JP;
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Aichi-ken, JP;
DENSO CORPORATION, Aichi-ken, JP;
SHOWA DENKO K.K., Tokyo-to, JP;
Abstract
When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio S(=S×100/S) of an area (S) of a Si-plane side facet region to a total area (S) of the growth plane is maintained at 20% or less.