The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Sep. 07, 2011
Ryota Sasajima, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Naonori Akae, Toyama, JP;
Osamu Kasahara, Toyama, JP;
Ryota Sasajima, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Naonori Akae, Toyama, JP;
Osamu Kasahara, Toyama, JP;
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Abstract
Provided is a method of manufacturing a semiconductor device, including: forming a silicon oxide film on a surface of a substrate holder by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer; forming a thin film on a substrate by using a process gas; removing deposits attached onto the substrate holder by using a fluorine-containing gas; and reforming a silicon oxide film on the surface of the substrate holder after removal of the deposits by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer by using an oxygen-containing gas and a hydrogen-containing gas.