The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
May. 23, 2014
Applicant:
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Inventors:
Sofiane Ben Mbarek, Grenoble, FR;
Sophie Giroud, Saint-Egreve, FR;
Frederic-Xavier Gaillard, Voiron, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00531 (2013.01); B81C 1/0015 (2013.01); B81C 1/00539 (2013.01); B81B 2203/0118 (2013.01); B81C 2201/014 (2013.01); B81C 2201/019 (2013.01); B81C 2201/0114 (2013.01); B81C 2201/0115 (2013.01); B81C 2203/036 (2013.01);
Abstract
Method for making at least one first suspended part of a microelectronic or nanoelectronic structure from a monolithic part of a first substrate, the method comprising the following steps: